Infineon IPD50N04S4L-08: High-Performance 40V OptiMOS Power MOSFET

The Infineon IPD50N04S4L-08 stands as a prime example of advanced power semiconductor technology, engineered to meet the rigorous demands of modern high-efficiency applications. As part of Infineon's renowned OptiMOS™ power MOSFET family, this 40V N-channel transistor is specifically designed to deliver exceptional power density and superior switching performance in a compact, space-saving package.

A key highlight of this MOSFET is its remarkably low on-state resistance (RDS(on)) of just 0.8 mΩ (max.). This ultra-low resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. This makes the device an ideal choice for power management tasks where energy savings and thermal performance are paramount.

Furthermore, the component is optimized for fast switching operations, enabling its use in high-frequency circuits such as switched-mode power supplies (SMPS), motor control systems, and synchronous rectification in DC-DC converters. The low gate charge (Qg) and excellent figure of merit (FOM) ensure that switching losses are kept to an absolute minimum, further enhancing overall efficiency.

Housed in a robust D2PAK (TO-263) package, the IPD50N04S4L-08 offers excellent thermal characteristics, allowing for effective heat dissipation even under continuous high-current operation. Its 40V drain-source voltage rating makes it well-suited for a broad range of industrial and automotive applications, including battery management systems (BMS), power tools, and load switches.

In summary, the Infineon IPD50N04S4L-08 combines low conduction loss, high switching speed, and outstanding thermal behavior in a single device, providing designers with a reliable and high-performance solution for next-generation power electronics.

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Keywords: OptiMOS™, Low RDS(on), High Efficiency, Power MOSFET, Fast Switching