Infineon IPN95R3K7P7: A High-Performance 950V CoolMOS™ P7 Power Transistor

In the realm of high-power applications, efficiency, thermal performance, and reliability are paramount. The Infineon IPN95R3K7P7 stands out as a state-of-the-art 950V superjunction MOSFET from the revolutionary CoolMOS™ P7 series, engineered to meet the rigorous demands of modern power conversion systems. This device is specifically designed to deliver exceptional efficiency and power density in applications such as server and telecom SMPS, industrial power supplies, solar inverters, and lighting.

A key breakthrough of the IPN95R3K7P7 is its drastically reduced figure-of-merit (RDS(on) x Eoss), which signifies an optimal balance between low conduction losses and minimal switching losses. This achievement translates directly into higher system efficiency, allowing designers to push the boundaries of power density while maintaining cooler operation. The ultra-low effective output capacitance (Eoss) is particularly beneficial in quasi-resonant and hard-switching topologies, enabling faster switching frequencies and, consequently, the use of smaller passive components.

Furthermore, the 950V drain-source voltage rating provides a significant safety margin for operation in universal mains applications (85 – 305 VAC), enhancing system robustness and reliability against line transients and spikes. The P7 technology also incorporates integrated additional features like a high-voltage integrated source-drain diode for improved body diode robustness, contributing to higher reliability in continuous conduction mode (CCM) totem-pole PFC stages.

The package itself, the TO-220 FullPAK, offers a fully isolated mounting surface. This simplifies the thermal management process by allowing direct attachment to a heatsink without the need for an insulating washer, thereby improving heat dissipation and reducing the overall part count in the Bill of Materials (BOM).

ICGOOODFIND: The Infineon IPN95R3K7P7 is a pinnacle of power transistor technology, offering designers a superior combination of high voltage capability, minimized switching losses, and enhanced thermal performance. It is an ideal solution for creating more compact, efficient, and reliable high-power systems.

Keywords: High Efficiency, 950V Rating, CoolMOS™ P7, Low Switching Losses, Power Density